Delay measurements: MIL-STD-883K-2017 3003.1

Transition time measurements: MIL-STD-883K-2017 3004.1

Power supply current: MIL-STD-883K-2017 3005.1

High level output voltage: MIL-STD-883K-2017 3006.1

Low level output voltage: MIL-STD-883K-2017 3007.1

Input current, low level: MIL-STD-883K-2017 3009.1

Input current, high level: MIL-STD-883K-2017 3010.1

Forward voltage:

Semiconductor discrete device testing measurement GJB 128A-1997/method 4011

Reverse current:

Semiconductor discrete device testing measurement GJB 128A-1997/method 4016

Forward voltage drop:

Measuring methods for semiconductor photocouplers SJ/T 2215-2015 /5.1

Reverse Leakage Current:

Measuring methods for semiconductor photocouplers SJ/T 2215-2015 /5.3

Reverse breakdown current:

Measuring methods for semiconductor photocouplers SJ/T 2215-2015 /5.4

Input current, high level:

Measuring methods for semiconductor photocouplers SJ/T 2215-2015 /5.14

Input current, low level:

Measuring methods for semiconductor photocouplers SJ/T 2215-2015 /5.15

Current transfer ratio:

Measuring methods for semiconductor photocouplers SJ/T 2215-2015 /5.9

Standards:

Test methods for electronic and electrical component parts GJB360B-2009 method 303

Standards:

Test methods for electronic and electrical component parts GJB360B-2009 method 305

Standards:

Fixed inductors for use in electronic equipment Part 2: sectional specification surface mounting inductors

General specification for precision wire wound potentiometers GJB1523-1992

DC resistance of a coil: General specification for electromagnetic relays GJB 1042A－2002 4.6.8.1

Pull-in voltage: General specification for electromagnetic relays GJB 1042A－2002 4.6.8.3.1

Dropout voltage: General specification for electromagnetic relays GJB 1042A－2002 4.6.8.3.4

Semiconductor discrete devices and integrated circuit Part 7:

Bipolar Transistors GB/T 4587-1994

Semiconductor discrete devices and integrated circuit Part 8:

Field-effect transistors GB/T 4586-1994